Patent · US Active

Wafer heating and temperature control by backside fluid injection

US8328942B2 · kind B2 · utility

4Cited by

7References

23Claims

0Family size

Assignee

Lam Research Corporation · US

Inventors

Ben Mooring · Austin, US
John Parks · Hercules, US
Diane Hymes · San Jose, US

Key dates

Filing date	Dec 17, 2004
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Feb 21, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67109
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.