Patent · US Active

Method of forming an alloy in an interconnect structure to increase electromigration resistance

US8329577B2 · kind B2 · utility

6Cited by

11References

9Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Matthias Lehr · Dresden, DE
Moritz Andreas Meyer · Pulheim, DE
Eckhard Langer · Radebeul, DE

Key dates

Filing date	Jan 27, 2011
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Jan 27, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76883
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.