Ultrahigh density monolithic three dimensional vertical NAND string memory device and method of making thereof

US8330208B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Johann Alsmeier · San Jose, US
• Vinod R. Purayath · Santa Clara, US
• Henry Chien · San Jose, US
• George Matamis · Danville, US
• Yao-Sheng Lee · Tampa, US
• James Kai · Santa Clara, US
• Yuan Zhang · Nanjing, CN

Key dates

• Filing date: Apr 19, 2012
• Grant date: Dec 11, 2012
• Expiry date: Apr 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/693

Abstract

Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.