James Kai
152Patents
31h-index
132Co-inventors
93Inventor score
Filing activity: Aug 13, 1996 → Jan 23, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8187936B2 | Ultrahigh density vertical NAND memory device and method of making thereof | Electricity | 294 | Active |
| US10629616B1 | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer | Electricity | 93 | Active |
| US9502471B1 | Multi tier three-dimensional memory devices including vertically shared bit lines | Electricity | 83 | Active |
| US9985098B2 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Electricity | 72 | Active |
| US6057239A | Dual damascene process using sacrificial spin-on materials | Electricity | 72 | Expired |
| US9576975B2 | Monolithic three-dimensional NAND strings and methods of fabrication thereof | Electricity | 72 | Active |
| US6263941A | Nozzle for cleaving substrates | Emerging Cross-Sectional Technologies | 71 | Expired |
| US6221740A | Substrate cleaving tool and method | Emerging Cross-Sectional Technologies | 70 | Expired |
| US6513564B2 | Nozzle for cleaving substrates | Emerging Cross-Sectional Technologies | 68 | Expired |
| US8928061B2 | Three dimensional NAND device with silicide containing floating gates | Electricity | 63 | Active |
| US9449982B2 | Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks | Electricity | 60 | Active |
| US10038006B2 | Through-memory-level via structures for a three-dimensional memory device | Electricity | 58 | Active |
| US9824966B1 | Three-dimensional memory device containing a lateral source contact and method of making the same | Electricity | 58 | Active |
| US9252151B2 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Electricity | 55 | Active |
| US9818693B2 | Through-memory-level via structures for a three-dimensional memory device | Electricity | 53 | Active |
| US9922987B1 | Three-dimensional memory device containing separately formed drain select transistors and method of making thereof | Electricity | 53 | Active |
| US10008570B2 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Electricity | 51 | Active |
| US9831266B2 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Electricity | 50 | Active |
| US9818759B2 | Through-memory-level via structures for a three-dimensional memory device | Electricity | 50 | Active |
| US9972640B1 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | Electricity | 47 | Active |
| US9917100B2 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Electricity | 42 | Active |
| US10020363B2 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Electricity | 42 | Active |
| US8330208B2 | Ultrahigh density monolithic three dimensional vertical NAND string memory device and method of making thereof | Electricity | 39 | Active |
| US9953992B1 | Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof | Electricity | 38 | Active |
| US8461641B2 | Ultrahigh density vertical NAND memory device and method of making thereof | Electricity | 37 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.