Patent · US Active

Semiconductor device including molding compound layer forms a common plane with the surface of the semiconductor chip

US8330273B2 · kind B2 · utility

20Cited by

5References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Brunnbauer · Lappersdorf, DE
Jens Pohl · San Luis Obispo, US
Rainer Steiner · Regensburg, DE

Key dates

Filing date	Oct 14, 2010
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Oct 14, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method is disclosed. In one embodiment, the method includes placing a first semiconductor over an electrically conductive carrier. The first semiconductor is covered with a molding compound. A through hole is formed in the molding compound. A first material is deposited in the through hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.