Patent · US Active

Semiconductor structure and method for making same

US8330274B2 · kind B2 · utility

2Cited by

1References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Barth · Munich, DE
Gottfried Beer · Nittendorf, DE
Joern Plagmann · Munich, DE
Jens Pohl · San Luis Obispo, US
Werner Robl · Regensburg, DE
Rainer Steiner · Regensburg, DE
Mathias Vaupel · Regensburg, DE

Key dates

Filing date	Sep 29, 2010
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Sep 29, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15788
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.