Device fabricated using an electroplating process

US8334202B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jens Pohl · San Luis Obispo, US
• Hans-Joachim Barth · Munich, DE
• Gottfried Beer · Nittendorf, DE
• Rainer Steiner · Regensburg, DE
• Werner Robl · Regensburg, DE
• Mathias Vaupel · Regensburg, DE

Key dates

• Filing date: Nov 3, 2009
• Grant date: Dec 18, 2012
• Expiry date: Apr 4, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a device includes providing a substrate including at least one contact and applying a dielectric layer over the substrate. The method includes applying a first seed layer over the dielectric layer, applying an inert layer over the seed layer, and structuring the inert layer, the first seed layer, and the dielectric layer to expose at least a portion of the contact. The method includes applying a second seed layer over exposed portions of the structured dielectric layer and the contact such that the second seed layer makes electrical contact with the structured first seed layer. The method includes electroplating a metal on the second seed layer.