Patent · US Active

Method for processing a semiconductor wafer or die, and particle deposition device

US8338317B2 · kind B2 · utility

5Cited by

12References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Engelhardt · Feldkirchen-Westerham, DE
Hans-Joerg Timme · Ottobrunn, DE
Ivan Nikitn · Regensburg, DE
Manfred Frank · Auckland, NZ
Thomas Kunstmann · Hemau, DE
Werner Robl · Regensburg, DE
Guenther Ruhl · Regensburg, DE

Key dates

Filing date	Apr 6, 2011
Grant date	Dec 25, 2012
Priority date	—
Expiry date	Apr 21, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2203/1344
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.