Transient voltage suppressor and method
US8339758B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2008 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | May 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/251
Abstract
A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.