Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers
US8343810B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.