Resistive-switching memory elements having improved switching characteristics

US8343813B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Ronald J. Kuse · Dublin, US
• Imran Hashim · Saratoga, US
• Tony P. Chiang · Campbell, US

Key dates

• Filing date: Feb 12, 2010
• Grant date: Jan 1, 2013
• Expiry date: Jan 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/84

Abstract

Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.