Integrated circuit heating to effect in-situ annealing
US8344475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.