Methods of forming patterns
US8349545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2012 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Feb 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.