Patent · US Active

Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates

US8351478B2 · kind B2 · utility

235Cited by

60References

33Claims

0Family size

Assignee

SORAA, INC. · US

Inventors

James W. Raring · Lompoc, US
Nick Pfister · Goleta, US
Mathew C. Schmidt · Lompoc, US
Christiane Poblenz · Goleta, US

Key dates

Filing date	Sep 17, 2010
Grant date	Jan 8, 2013
Priority date	—
Expiry date	Nov 25, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/4025
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.