Method of forming high-k dielectric stop layer for contact hole opening
US8354347B2 · kind B2 · utility
4Cited by
8References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2007 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Jan 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite etch stop layer which comprises primary and secondary stop layers is used to form contacts in a dielectric layer to contact regions in a substrate. The secondary etch stop layer includes a high-k dielectric material to achieve high etch selectivity with the dielectric layer during contact formation. The secondary stop layer is removed to expose the contact regions. Removal of the secondary stop layer is achieved with high selectivity to the materials therebelow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.