Method and system for controlling critical dimension and roughness in resist features
US8354655B2 · kind B2 · utility
5Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2011 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | May 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.