Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8355418B2 · kind B2 · utility
233Cited by
60References
35Claims
0Family size
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Key dates
| Filing date | Sep 15, 2010 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Sep 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.