Methods of forming semiconductor devices with replacement gate structures
US8357978B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2011 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Sep 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are various methods of forming replacement gate structures on semiconductor devices and devices incorporating such gate structures. In one example, the device includes a plurality of gate structures and at least one sidewall spacer positioned proximate each of the gate structures, a metal silicide region in a source/drain region formed in a substrate, wherein the metal silicide region extend laterally so as to contact the sidewall spacer positioned proximate each of the gate structures and a conductive contact positioned between the gate structures that conductively contacts the metal silicide region, wherein the conductive contact has a bottom portion that is wider than an upper portion of the conductive contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.