Contact structure for semiconductor device having trench shield electrode and method
US8362548B2 · kind B2 · utility
4Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | May 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.