Semiconductor device and manufacturing method thereof
US8362612B1 · kind B1 · utility
40Cited by
27References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jan 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are disclosed. A first insulation layer is formed on a semiconductor die, a redistribution layer electrically connected to a bond pad is formed on the first insulation layer, and a second insulation layer covers the redistribution layer. The second insulation layer is made of a cheap, non-photosensitive material. Accordingly, the manufacturing cost of the semiconductor device can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.