Manufacture of thin silicon-on-insulator (SOI) structures
US8367521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of forming a SOI structure having a thin silicon layer by forming a first etch stop layer on a donor substrate, forming a second etch stop layer on the first etch stop layer, wherein the material of the second etch stop layer differs from the material of the first etch stop layer, forming a thin silicon layer on the second etch stop layer, preferably by epitaxy, and bonding the intermediate structure to a target substrate, followed by detaching the donor substrate by splitting initiated in the first etch stop layer at a weakened region and removing the remaining material of the etch stop layers to produce a final ETSOI structure. The invention also relates to the ETSOI structure produces by the described method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.