Method for the treatment of a semiconductor wafer

US8372213B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Guenter Schwab · Vilshofen an der Donau, DE
• Diego Feijoo · Burghausen, DE
• Thomas Buschhardt · Burghausen, DE
• Hans-Joachim Luthe · Burgkirchen an der Alz, DE
• Franz Sollinger · Polling, DE

Key dates

• Filing date: Dec 3, 2009
• Grant date: Feb 12, 2013
• Expiry date: Feb 23, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67028
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.