Patent · US Active

Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure

US8373244B2 · kind B2 · utility

2Cited by
9References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 8, 2008
Grant dateFeb 12, 2013
Priority date
Expiry dateJan 12, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N19/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

By forming thermocouples in a contact structure of a semiconductor device, respective extension lines of the thermocouples may be routed to any desired location within the die, without consuming valuable semiconductor area in the device layer. Thus, an appropriate network of measurement points of interest may be provided, while at the same time allowing the application of well-established process techniques and materials. Hence, temperature-dependent signals may be obtained from hot spots substantially without being affected by design constraints in the device layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.