Uniformity of a scanned ion beam
US8378313B2 · kind B2 · utility
0Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Apr 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30483
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.