Patent · US Active

Molecular bonding method with cleaning with hydrofluoric acid in vapor phase and rinsing with deionized water

US8382933B2 · kind B2 · utility

0Cited by

5References

11Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Frank Fournel · Meylan, FR
Hubert Moriceau · Saint-Égrève, FR
Christophe Morales · Le Pont-de-Claix, FR
Pierre Perreau · Grenoble, FR

Key dates

Filing date	Feb 8, 2008
Grant date	Feb 26, 2013
Priority date	—
Expiry date	Feb 12, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/187
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.