Patent · US Active

Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection

US8383002B2 · kind B2 · utility

2Cited by
8References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 24, 2010
Grant dateFeb 26, 2013
Priority date—
Expiry dateMar 25, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3065
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.