Low 1C screw dislocation 3 inch silicon carbide wafer
US8384090B2 · kind B2 · utility
22Cited by
36References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2007 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Apr 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.