Contact optimization for enhancing stress transfer in closely spaced transistors

US8384161B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ralf Richter · Dresden, DE
• Kai Frohberg · Meißen, DE
• Holger Schuehrer · Dresden, DE

Key dates

• Filing date: Jun 25, 2010
• Grant date: Feb 26, 2013
• Expiry date: Apr 7, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By appropriately designing the geometric configuration of a contact level of a sophisticated semiconductor device, the tensile stress level of contact elements in N-channel transistors may be increased, while the tensile strain component of contact elements caused in the P-channel transistor may be reduced.