Patent · US Active

Method for manufacturing chips

US8389327B2 · kind B2 · utility

0Cited by

1References

21Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Torsten Kramer · Wannweil, DE
Matthias Boehringer · Reutlingen, DE
Stefan Pinter · Reutlingen, DE
Hubert Benzel · Neckartenzlingen, DE
Matthias Illing · Tübingen, DE
Frieder Haag · Wannweil, DE
Simon Armbruster · Wannweil, DE

Key dates

Filing date	Dec 2, 2008
Grant date	Mar 5, 2013
Priority date	—
Expiry date	Feb 10, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/04941
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the chip (1, 2), the diaphragm (11, 12) is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip (1, 2) in an electroplating process before the chip is separated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.