Patent · US Active

Single crystal reo buffer on amorphous SiOx

US8394194B1 · kind B1 · utility

5Cited by

2References

9Claims

0Family size

Inventors

Rytis Dargis · Greensboro, US
Andrew Clark · Shrewsbury, US
Robin Smith · Palo Alto, US
Michael S. Lebby · Apache Junction, US

Key dates

Filing date	Jun 13, 2012
Grant date	Mar 12, 2013
Priority date	—
Expiry date	Jun 13, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.