Sophisticated metallization systems in semiconductors formed by removing damaged dielectric layers after forming the metal features

US8399335B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Torsten Huisinga · Dresden, DE
• Michael Grillberger · Radebeul, DE
• Frank Feustel · Dresden, DE

Key dates

• Filing date: Dec 16, 2010
• Grant date: Mar 19, 2013
• Expiry date: Jul 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated semiconductor devices, densely packed metal line layers may be formed on the basis of an ultra low-k dielectric material, wherein corresponding modified portions of increased dielectric constant may be removed in the presence of the metal lines, for instance, by means of a selective wet chemical etch process. Consequently, the metal lines may be provided with desired critical dimensions without having to take into consideration a change of the critical dimensions upon removing the modified material portion, as is the case in conventional strategies.