Via-less thin film resistor with a dielectric cap
US8400257B2 · kind B2 · utility
16Cited by
34References
22Claims
0Family size
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Inventors
Key dates
| Filing date | Aug 24, 2010 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Oct 10, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.