Enhancement mode GaN HEMT device and method for fabricating the same
US8404508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.