Methods for fabricating FinFET semiconductor devices using L-shaped spacers
US8404592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2009 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Oct 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating semiconductor structures, such as fin structures of FinFET transistors, are provided. In one embodiment, a method comprises providing a semiconductor substrate and forming a plurality of mandrels overlying the semiconductor substrate. Each of the mandrels has sidewalls. L-shaped spacers are formed about the sidewalls of the mandrels. Each L-shaped spacer comprises a rectangular portion disposed at a base of a mandrel and an orthogonal portion extending from the rectangular portion. Each L-shaped spacer also has a spacer width. The orthogonal portions are removed from each of the L-shaped spacers leaving at least a portion of the rectangular portions. The semiconductor substrate is etched to form fin structures, each fin structure having a width substantially equal to the spacer width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.