Patent · US Active

Lead-free structures in a semiconductor device

US8410604B2 · kind B2 · utility

1Cited by
5References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 26, 2010
Grant dateApr 2, 2013
Priority date
Expiry dateJun 28, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor die and a plurality of lead-free solder bumps disposed on a surface of the semiconductor die. A substrate includes a plurality of metal layers and a plurality of dielectric layers. One of the metal layers includes a plurality of contact pads corresponding to the plurality of lead-free solder bumps, and one of the dielectric layers is an exterior dielectric layer having a plurality of respective openings for the contact pad. A plurality of respective copper posts is disposed on the contact pads. The respective copper post for each contact pad extends from the contact pad through the respective opening for the contact pad. The semiconductor die is mounted on the substrate with connections between the plurality of lead-free solder bumps and the plurality of copper posts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.