Method for process window optimized optical proximity correction
US8413081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Feb 23, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.