Composite target sputtering for forming doped phase change materials
US8426242B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.