Conducting bridge random access memory (CBRAM) device structures
US8426839B1 · kind B1 · utility
19Cited by
15References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2010 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Sep 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8822
Abstract
A conductive bridging memory cell may include an ion conductor layer formed over an active electrode that is a source of conductive ions for the ion conductor; a conductive layer; and a barrier layer formed below the active layer and in contact with the conductive, the barrier layer substantially preventing a movement of conductive ions therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.