Shielded gate trench (SGT) MOSFET devices and manufacturing processes
US8431989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2011 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench. The semiconductor power device further includes an insulation protective layer disposed on top of the semiconductor power device having a plurality of source openings on top of the source region and the source connecting trench provided for electrically connecting to the source metal and at least a gate opening provided for electrically connecting the gate pad to the trenched gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.