Back diffusion suppression structures

US8436398B2 · kind B2 · utility

Assignee

• Efficient Power Conversion Corporation · US

Inventors

• Alexander Lidow · Manhattan Beach, US
• Robert Beach · Altadena, US
• Guang Yuan Zhao · Torrance, US
• Jianjun Cao · Torrance, US

Key dates

• Filing date: Apr 7, 2010
• Grant date: May 7, 2013
• Expiry date: Nov 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.