Patent · US Active

Methods for reducing the width of the unbonded region in SOI structures

US8440541B2 · kind B2 · utility

6Cited by

14References

29Claims

0Family size

Assignee

MEMC Electronic Materials, Inc. · US

Inventors

John A. Pitney · Saint Peters, US
Ichiro Yoshimura · Yokohama, JP
Lu Fei · Shanghai, CN

Key dates

Filing date	Feb 4, 2011
Grant date	May 14, 2013
Priority date	—
Expiry date	Feb 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02052
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.