Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
US8441046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2010 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Sep 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at a distance away from the split-shielded trench gate. The IGBT device further includes a body region extended between the split-shielded trench gate and the dummy trench encompassing a source region surrounding the split-shielded trench gate near a top surface of the semiconductor substrate. The IGBT device further includes a heavily doped N region disposed below the body region and above a source-dopant drift region above a bottom body-dopant collector region at a bottom surface of the semiconductor substrate. In an alternative embodiment, the IGBT may include a planar gate with a trench shield electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.