Patent · US Active

Semiconductor device and method of manufacturing a semiconductor device

US8441804B2 · kind B2 · utility

2Cited by

6References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Oliver Haeberlen · Villach, AT
Klaus Schiess · Allensbach, DE
Stefan Kramp · Villach, AT

Key dates

Filing date	Jul 25, 2008
Grant date	May 14, 2013
Priority date	—
Expiry date	Jul 23, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method of manufacturing a semiconductor device. One embodiment provides an electrically conductive carrier. A semiconductor chip is placed over the carrier. An electrically insulating layer is applied over the carrier and the semiconductor chip. The electrically insulating layer has a first face facing the carrier and a second face opposite to the first face. A first through-hole is in the electrically insulating layer. Solder material is deposited in the first through-hole and on the second face of the electrically insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.