Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics

US8445075B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Huiwen Xu · Shanghai, CN
• Mei-Yee Shek · Mountain View, US
• Li-Qun Xia · Santa Clara, US
• Amir Al-Bayati · San Jose, US
• Derek R. Witty · Fremont, US
• Hichem M'Saad · Santa Clara, US

Key dates

• Filing date: Dec 22, 2010
• Grant date: May 21, 2013
• Expiry date: Dec 22, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.