Substrate treatment to reduce pattern roughness

US8449293B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Benjamin M. Rathsack · Austin, US
• Steven Scheer · Austin, US
• Mark H. Somervell · Richardson, US

Key dates

• Filing date: Apr 30, 2010
• Grant date: May 28, 2013
• Expiry date: Apr 2, 2031

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/2004
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface 402 of the substrate 401 to provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.