Polysilicon films by HDP-CVD
US8450191B2 · kind B2 · utility
455Cited by
160References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Apr 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g. <500° C.) relative to prior art techniques. The availability of a bias plasma power adjustment further enables adjustment of conformality of the formed polysilicon layer. When dopants are included in the high density plasma, they may be incorporated into the polysilicon layer in such a way that they do not require a separate activation step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.