Patent · US Active

Protective offset sputtering

US8460519B2 · kind B2 · utility

5Cited by
29References
46Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 23, 2006
Grant dateJun 11, 2013
Priority date
Expiry dateMar 8, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3455
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.