Ultrahigh density vertical NAND memory device and method of making thereof

US8461641B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Johann Alsmeier · San Jose, US
• Vinod R. Purayath · Santa Clara, US
• Henry Chien · San Jose, US
• George Matamis · Danville, US
• Yao-Sheng Lee · Tampa, US
• James Kai · Santa Clara, US
• Yuan Zhang · Nanjing, CN

Key dates

• Filing date: Nov 5, 2012
• Grant date: Jun 11, 2013
• Expiry date: Nov 5, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/693

Abstract

Monolithic three dimensional NAND string includes a semiconductor channel having a U-shaped pipe shape. A plurality of control gate electrodes having a strip shape extends substantially parallel to the major surface of the substrate. The plurality of control gate electrodes include at least a first control gate electrode located in a first device level and a second control gate electrode located in a second device level located over the major surface of the substrate and below the first device level. A cut area separates the plurality of control gate electrodes in a direction substantially perpendicular to the major surface of the substrate. A blocking dielectric is located in contact with the plurality of control gate electrodes, a charge storage region located in contact with the blocking dielectric and a tunnel dielectric is located between the charge storage region and the semiconductor channel.