Semiconductor component with a drift region and a drift control region

US8461648B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Anton Mauder · Kolbermoor, DE
• Armin Willmeroth · Friedberg, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Stefan Sedlmaier · Munich, DE
• Markus Zundel · Egmating, DE
• Franz Hirler · Isen, DE
• Arunjai Mittal · Villach, AT

Key dates

• Filing date: Jul 27, 2006
• Grant date: Jun 11, 2013
• Expiry date: Apr 17, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/661

Abstract

A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.