Self-aligned masking for solar cell manufacture
US8465909B2 · kind B2 · utility
2Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2010 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.